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低漏电高增益InGaAs/InP SAGM雪崩光电二极管
王树堂; 曾靖; 李锋; 胡春阳; 夏彩虹; 孙捷; 樊爱香
1990
Source Publication半导体学报
Volume11Issue:12Pages:958
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:112261
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20511
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王树堂,曾靖,李锋,等. 低漏电高增益InGaAs/InP SAGM雪崩光电二极管[J]. 半导体学报,1990,11(12):958.
APA 王树堂.,曾靖.,李锋.,胡春阳.,夏彩虹.,...&樊爱香.(1990).低漏电高增益InGaAs/InP SAGM雪崩光电二极管.半导体学报,11(12),958.
MLA 王树堂,et al."低漏电高增益InGaAs/InP SAGM雪崩光电二极管".半导体学报 11.12(1990):958.
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