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低漏电高增益InGaAs/InP SAGM雪崩光电二极管 | |
王树堂; 曾靖; 李锋; 胡春阳; 夏彩虹; 孙捷; 樊爱香 | |
1990 | |
Source Publication | 半导体学报
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Volume | 11Issue:12Pages:958 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体器件 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:112261 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20511 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 王树堂,曾靖,李锋,等. 低漏电高增益InGaAs/InP SAGM雪崩光电二极管[J]. 半导体学报,1990,11(12):958. |
APA | 王树堂.,曾靖.,李锋.,胡春阳.,夏彩虹.,...&樊爱香.(1990).低漏电高增益InGaAs/InP SAGM雪崩光电二极管.半导体学报,11(12),958. |
MLA | 王树堂,et al."低漏电高增益InGaAs/InP SAGM雪崩光电二极管".半导体学报 11.12(1990):958. |
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