低漏电高增益InGaAs/InP SAGM雪崩光电二极管

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	低漏电高增益InGaAs/InP SAGM雪崩光电二极管
	王树堂; 曾靖; 李锋; 胡春阳; 夏彩虹; 孙捷; 樊爱香
	1990
Source Publication	半导体学报
Volume	11 Issue:12 Pages:958
metadata_83	中科院半导体所
Subject Area	半导体器件
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:112261
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20511
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	王树堂,曾靖,李锋,等. 低漏电高增益InGaAs/InP SAGM雪崩光电二极管[J]. 半导体学报,1990,11(12):958.
APA	王树堂.,曾靖.,李锋.,胡春阳.,夏彩虹.,...&樊爱香.(1990).低漏电高增益InGaAs/InP SAGM雪崩光电二极管.半导体学报,11(12),958.
MLA	王树堂,et al."低漏电高增益InGaAs/InP SAGM雪崩光电二极管".半导体学报 11.12(1990):958.

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库