SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
铬硅化物的形成及其界面反应
丁孙安; 许振嘉; 李宝骐; 周一峰
1990
Source Publication半导体学报
Volume11Issue:12Pages:906
metadata_83中科院半导体所;中国科学技术大学
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:112269
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20507
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
丁孙安,许振嘉,李宝骐,等. 铬硅化物的形成及其界面反应[J]. 半导体学报,1990,11(12):906.
APA 丁孙安,许振嘉,李宝骐,&周一峰.(1990).铬硅化物的形成及其界面反应.半导体学报,11(12),906.
MLA 丁孙安,et al."铬硅化物的形成及其界面反应".半导体学报 11.12(1990):906.
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