SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ce-Si多层膜中铈硅化物的形成
何杰; 许振嘉; 钱家骏; 王玉田; 王佑祥
1990
Source Publication半导体学报
Volume11Issue:12Pages:946
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:112275
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20501
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
何杰,许振嘉,钱家骏,等. Ce-Si多层膜中铈硅化物的形成[J]. 半导体学报,1990,11(12):946.
APA 何杰,许振嘉,钱家骏,王玉田,&王佑祥.(1990).Ce-Si多层膜中铈硅化物的形成.半导体学报,11(12),946.
MLA 何杰,et al."Ce-Si多层膜中铈硅化物的形成".半导体学报 11.12(1990):946.
Files in This Item:
File Name/Size DocType Version Access License
6364.pdf(112KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[何杰]'s Articles
[许振嘉]'s Articles
[钱家骏]'s Articles
Baidu academic
Similar articles in Baidu academic
[何杰]'s Articles
[许振嘉]'s Articles
[钱家骏]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[何杰]'s Articles
[许振嘉]'s Articles
[钱家骏]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.