SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅表面溅射氮氧铝膜的实验研究
王德煌; 郭良
1990
Source Publication半导体学报
Volume11Issue:10Pages:804
metadata_83北京大学;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:112276
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20499
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王德煌,郭良. 硅表面溅射氮氧铝膜的实验研究[J]. 半导体学报,1990,11(10):804.
APA 王德煌,&郭良.(1990).硅表面溅射氮氧铝膜的实验研究.半导体学报,11(10),804.
MLA 王德煌,et al."硅表面溅射氮氧铝膜的实验研究".半导体学报 11.10(1990):804.
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