SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
离子注入及退火对GaAs/Si晶体完整性影响的研究
肖光明; 殷士端; 张敬平; 范缇文; 刘家瑞; 丁爱菊; 周钧铭; 朱沛然
1990
Source Publication半导体学报
Volume11Issue:11Pages:866
metadata_83中科院半导体所;中科院物理所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:112286
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20491
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
肖光明,殷士端,张敬平,等. 离子注入及退火对GaAs/Si晶体完整性影响的研究[J]. 半导体学报,1990,11(11):866.
APA 肖光明.,殷士端.,张敬平.,范缇文.,刘家瑞.,...&朱沛然.(1990).离子注入及退火对GaAs/Si晶体完整性影响的研究.半导体学报,11(11),866.
MLA 肖光明,et al."离子注入及退火对GaAs/Si晶体完整性影响的研究".半导体学报 11.11(1990):866.
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