Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究
	杨保华; 王占国; 万寿科; 龚秀英; 林兰英
	1990
Source Publication	半导体学报
Volume	11 Issue:10 Pages:738
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	其它基金
Indexed By	CSCD
Language	中文
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20489
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	杨保华,王占国,万寿科,等. Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究[J]. 半导体学报,1990,11(10):738.
APA	杨保华,王占国,万寿科,龚秀英,&林兰英.(1990).Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究.半导体学报,11(10),738.
MLA	杨保华,et al."Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究".半导体学报 11.10(1990):738.

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