SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究
杨保华; 王占国; 万寿科; 龚秀英; 林兰英
1990
Source Publication半导体学报
Volume11Issue:10Pages:738
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization其它基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20489
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨保华,王占国,万寿科,等. Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究[J]. 半导体学报,1990,11(10):738.
APA 杨保华,王占国,万寿科,龚秀英,&林兰英.(1990).Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究.半导体学报,11(10),738.
MLA 杨保华,et al."Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究".半导体学报 11.10(1990):738.
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