液相外延生长In_xGa_(1-x)As_ySb_(1-y)/GaSb及其性质研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	液相外延生长In_xGa_(1-x)As_ySb_(1-y)/GaSb及其性质研究
	刘学锋; 龚秀英; 王占国
	1990
Source Publication	半导体学报
Volume	11 Issue:10 Pages:746
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	其它基金
Indexed By	CSCD
Language	中文
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20487
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	刘学锋,龚秀英,王占国. 液相外延生长In_xGa_(1-x)As_ySb_(1-y)/GaSb及其性质研究[J]. 半导体学报,1990,11(10):746.
APA	刘学锋,龚秀英,&王占国.(1990).液相外延生长In_xGa_(1-x)As_ySb_(1-y)/GaSb及其性质研究.半导体学报,11(10),746.
MLA	刘学锋,et al."液相外延生长In_xGa_(1-x)As_ySb_(1-y)/GaSb及其性质研究".半导体学报 11.10(1990):746.

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