静压下GaAs_(1-x)P_x混晶的喇曼散射

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	静压下GaAs_(1-x)P_x混晶的喇曼散射
	李国华; 韩和相; 汪兆平; 縻东林; 郑健生
	1990
Source Publication	半导体学报
Volume	11 Issue:9 Pages:709
metadata_83	中科院半导体所;厦门大学
Subject Area	半导体物理
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	中文
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20475
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	李国华,韩和相,汪兆平,等. 静压下GaAs_(1-x)P_x混晶的喇曼散射[J]. 半导体学报,1990,11(9):709.
APA	李国华,韩和相,汪兆平,縻东林,&郑健生.(1990).静压下GaAs_(1-x)P_x混晶的喇曼散射.半导体学报,11(9),709.
MLA	李国华,et al."静压下GaAs_(1-x)P_x混晶的喇曼散射".半导体学报 11.9(1990):709.

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