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In_(0.15)Ga_(0.85)As/GaAs和GaAs/Al_(0.3)Ga_(0.7)As量子阱的静压下光致发光的对照研究
李国华; 郑宝真; 韩和相; 汪兆平
1990
Source Publication半导体学报
Volume11Issue:9Pages:718
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20473
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李国华,郑宝真,韩和相,等. In_(0.15)Ga_(0.85)As/GaAs和GaAs/Al_(0.3)Ga_(0.7)As量子阱的静压下光致发光的对照研究[J]. 半导体学报,1990,11(9):718.
APA 李国华,郑宝真,韩和相,&汪兆平.(1990).In_(0.15)Ga_(0.85)As/GaAs和GaAs/Al_(0.3)Ga_(0.7)As量子阱的静压下光致发光的对照研究.半导体学报,11(9),718.
MLA 李国华,et al."In_(0.15)Ga_(0.85)As/GaAs和GaAs/Al_(0.3)Ga_(0.7)As量子阱的静压下光致发光的对照研究".半导体学报 11.9(1990):718.
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