Knowledge Management System Of Institute of Semiconductors,CAS
In_(0.15)Ga_(0.85)As/GaAs和GaAs/Al_(0.3)Ga_(0.7)As量子阱的静压下光致发光的对照研究 | |
李国华; 郑宝真; 韩和相; 汪兆平 | |
1990 | |
Source Publication | 半导体学报
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Volume | 11Issue:9Pages:718 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体物理 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20473 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 李国华,郑宝真,韩和相,等. In_(0.15)Ga_(0.85)As/GaAs和GaAs/Al_(0.3)Ga_(0.7)As量子阱的静压下光致发光的对照研究[J]. 半导体学报,1990,11(9):718. |
APA | 李国华,郑宝真,韩和相,&汪兆平.(1990).In_(0.15)Ga_(0.85)As/GaAs和GaAs/Al_(0.3)Ga_(0.7)As量子阱的静压下光致发光的对照研究.半导体学报,11(9),718. |
MLA | 李国华,et al."In_(0.15)Ga_(0.85)As/GaAs和GaAs/Al_(0.3)Ga_(0.7)As量子阱的静压下光致发光的对照研究".半导体学报 11.9(1990):718. |
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