SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs半导体淬灭型双稳现象的实验研究
王守武; 刘文旭; 杨朴; 吴荣汉
1990
Source Publication半导体学报
Volume11Issue:9Pages:724
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:112310
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20471
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王守武,刘文旭,杨朴,等. GaAs/GaAlAs半导体淬灭型双稳现象的实验研究[J]. 半导体学报,1990,11(9):724.
APA 王守武,刘文旭,杨朴,&吴荣汉.(1990).GaAs/GaAlAs半导体淬灭型双稳现象的实验研究.半导体学报,11(9),724.
MLA 王守武,et al."GaAs/GaAlAs半导体淬灭型双稳现象的实验研究".半导体学报 11.9(1990):724.
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