SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/AlGaAs量子阱的输运特性
王杏华; 郑厚植
1990
Source Publication半导体学报
Volume11Issue:10Pages:727
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:112311
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20469
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王杏华,郑厚植. GaAs/AlGaAs量子阱的输运特性[J]. 半导体学报,1990,11(10):727.
APA 王杏华,&郑厚植.(1990).GaAs/AlGaAs量子阱的输运特性.半导体学报,11(10),727.
MLA 王杏华,et al."GaAs/AlGaAs量子阱的输运特性".半导体学报 11.10(1990):727.
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