SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs量子限制Stark效应及自电光双稳现象的实验研究
吴荣汉; 段海龙; 曾一平; 王启明; 林世鸣; 孔梅影; 张权生; 江德生; 谢茂海
1990
Source Publication半导体学报
Volume11Issue:9Pages:659
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:112323
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20465
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴荣汉,段海龙,曾一平,等. GaAs/GaAlAs量子限制Stark效应及自电光双稳现象的实验研究[J]. 半导体学报,1990,11(9):659.
APA 吴荣汉.,段海龙.,曾一平.,王启明.,林世鸣.,...&谢茂海.(1990).GaAs/GaAlAs量子限制Stark效应及自电光双稳现象的实验研究.半导体学报,11(9),659.
MLA 吴荣汉,et al."GaAs/GaAlAs量子限制Stark效应及自电光双稳现象的实验研究".半导体学报 11.9(1990):659.
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