SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Er~+注入单晶硅中非晶层晶化过程的TEM研究
严勇; 王培大; 胡梅生; 孙慧龄; 李齐; 冯端
1990
Source Publication半导体学报
Volume11Issue:7Pages:561
metadata_83南京大学;中科院半导体所;中科院微电子中心
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20459
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
严勇,王培大,胡梅生,等. Er~+注入单晶硅中非晶层晶化过程的TEM研究[J]. 半导体学报,1990,11(7):561.
APA 严勇,王培大,胡梅生,孙慧龄,李齐,&冯端.(1990).Er~+注入单晶硅中非晶层晶化过程的TEM研究.半导体学报,11(7),561.
MLA 严勇,et al."Er~+注入单晶硅中非晶层晶化过程的TEM研究".半导体学报 11.7(1990):561.
Files in This Item:
File Name/Size DocType Version Access License
6343.pdf(108KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[严勇]'s Articles
[王培大]'s Articles
[胡梅生]'s Articles
Baidu academic
Similar articles in Baidu academic
[严勇]'s Articles
[王培大]'s Articles
[胡梅生]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[严勇]'s Articles
[王培大]'s Articles
[胡梅生]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.