SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
不对称双势垒结构中的非世振磁隧穿现象
杨富华; 郑厚植; 陈宗圭
1990
Source Publication半导体学报
Volume11Issue:8Pages:565
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:112331
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20457
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨富华,郑厚植,陈宗圭. 不对称双势垒结构中的非世振磁隧穿现象[J]. 半导体学报,1990,11(8):565.
APA 杨富华,郑厚植,&陈宗圭.(1990).不对称双势垒结构中的非世振磁隧穿现象.半导体学报,11(8),565.
MLA 杨富华,et al."不对称双势垒结构中的非世振磁隧穿现象".半导体学报 11.8(1990):565.
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