SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
调制掺杂场效应管的电容和伏-安特性
邓生贵
1990
Source Publication半导体学报
Volume11Issue:7Pages:521
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:112347
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20447
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邓生贵. 调制掺杂场效应管的电容和伏-安特性[J]. 半导体学报,1990,11(7):521.
APA 邓生贵.(1990).调制掺杂场效应管的电容和伏-安特性.半导体学报,11(7),521.
MLA 邓生贵."调制掺杂场效应管的电容和伏-安特性".半导体学报 11.7(1990):521.
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