SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs-GaAlAs多量子阱界面特性的光学研究
徐仲英; 徐强; 郑宝真; 许继宗
1990
Source Publication半导体学报
Volume11Issue:6Pages:416
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization其它基金,中科院基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:112353
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20439
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐仲英,徐强,郑宝真,等. GaAs-GaAlAs多量子阱界面特性的光学研究[J]. 半导体学报,1990,11(6):416.
APA 徐仲英,徐强,郑宝真,&许继宗.(1990).GaAs-GaAlAs多量子阱界面特性的光学研究.半导体学报,11(6),416.
MLA 徐仲英,et al."GaAs-GaAlAs多量子阱界面特性的光学研究".半导体学报 11.6(1990):416.
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