GaAs-GaAlAs多量子阱界面特性的光学研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	GaAs-GaAlAs多量子阱界面特性的光学研究
	徐仲英; 徐强; 郑宝真; 许继宗
	1990
Source Publication	半导体学报
Volume	11 Issue:6 Pages:416
metadata_83	中科院半导体所
Subject Area	半导体物理
Funding Organization	其它基金,中科院基金
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:112353
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20439
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	徐仲英,徐强,郑宝真,等. GaAs-GaAlAs多量子阱界面特性的光学研究[J]. 半导体学报,1990,11(6):416.
APA	徐仲英,徐强,郑宝真,&许继宗.(1990).GaAs-GaAlAs多量子阱界面特性的光学研究.半导体学报,11(6),416.
MLA	徐仲英,et al."GaAs-GaAlAs多量子阱界面特性的光学研究".半导体学报 11.6(1990):416.

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