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GaAs/AlGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析
郑宝真; 许继宗; 王丽明; 徐仲英; 朱龙德
1990
Source Publication半导体学报
Volume11Issue:6Pages:422
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:112354
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20437
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑宝真,许继宗,王丽明,等. GaAs/AlGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析[J]. 半导体学报,1990,11(6):422.
APA 郑宝真,许继宗,王丽明,徐仲英,&朱龙德.(1990).GaAs/AlGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析.半导体学报,11(6),422.
MLA 郑宝真,et al."GaAs/AlGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析".半导体学报 11.6(1990):422.
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