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氮化硅和氮氧化硅在俄歇电子谱分析中的电子束和离子束辐照效应
陈维德; Bender H; Maes H E
1990
Source Publication半导体学报
Volume11Issue:6Pages:441
metadata_83中科院半导体所;比利时大学
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:112357
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20435
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈维德,Bender H,Maes H E. 氮化硅和氮氧化硅在俄歇电子谱分析中的电子束和离子束辐照效应[J]. 半导体学报,1990,11(6):441.
APA 陈维德,Bender H,&Maes H E.(1990).氮化硅和氮氧化硅在俄歇电子谱分析中的电子束和离子束辐照效应.半导体学报,11(6),441.
MLA 陈维德,et al."氮化硅和氮氧化硅在俄歇电子谱分析中的电子束和离子束辐照效应".半导体学报 11.6(1990):441.
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