SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
注锌硅的物理行为
卢励吾; 许振嘉; 殷士端
1990
Source Publication半导体学报
Volume11Issue:5Pages:341
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:112364
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20429
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,许振嘉,殷士端. 注锌硅的物理行为[J]. 半导体学报,1990,11(5):341.
APA 卢励吾,许振嘉,&殷士端.(1990).注锌硅的物理行为.半导体学报,11(5),341.
MLA 卢励吾,et al."注锌硅的物理行为".半导体学报 11.5(1990):341.
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