SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
用SF6—N2混合气的反应离子刻蚀制作WSix微米结构
程美乔; 傅绍云; 李建中
1990
Source Publication半导体学报
Volume11Issue:5Pages:355
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20427
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
程美乔,傅绍云,李建中. 用SF6—N2混合气的反应离子刻蚀制作WSix微米结构[J]. 半导体学报,1990,11(5):355.
APA 程美乔,傅绍云,&李建中.(1990).用SF6—N2混合气的反应离子刻蚀制作WSix微米结构.半导体学报,11(5),355.
MLA 程美乔,et al."用SF6—N2混合气的反应离子刻蚀制作WSix微米结构".半导体学报 11.5(1990):355.
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