SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
嵌入在Si衬底上的分子束外延GaAs层的微区喇曼和光致发光分析
李国华; 梁基本; 韩和相; 汪兆平; 孔梅影
1990
Source Publication半导体学报
Volume11Issue:3Pages:238
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:112372
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20423
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李国华,梁基本,韩和相,等. 嵌入在Si衬底上的分子束外延GaAs层的微区喇曼和光致发光分析[J]. 半导体学报,1990,11(3):238.
APA 李国华,梁基本,韩和相,汪兆平,&孔梅影.(1990).嵌入在Si衬底上的分子束外延GaAs层的微区喇曼和光致发光分析.半导体学报,11(3),238.
MLA 李国华,et al."嵌入在Si衬底上的分子束外延GaAs层的微区喇曼和光致发光分析".半导体学报 11.3(1990):238.
Files in This Item:
File Name/Size DocType Version Access License
6325.pdf(135KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[李国华]'s Articles
[梁基本]'s Articles
[韩和相]'s Articles
Baidu academic
Similar articles in Baidu academic
[李国华]'s Articles
[梁基本]'s Articles
[韩和相]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[李国华]'s Articles
[梁基本]'s Articles
[韩和相]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.