SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
等电子杂质Sb对InP中缺陷的影响
叶式中; 杨保华; 徐岭
1990
Source Publication半导体学报
Volume11Issue:4Pages:253
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:112374
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20421
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
叶式中,杨保华,徐岭. 等电子杂质Sb对InP中缺陷的影响[J]. 半导体学报,1990,11(4):253.
APA 叶式中,杨保华,&徐岭.(1990).等电子杂质Sb对InP中缺陷的影响.半导体学报,11(4),253.
MLA 叶式中,et al."等电子杂质Sb对InP中缺陷的影响".半导体学报 11.4(1990):253.
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