SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs单量子阱电光吸收和光调制
朱龙德; 熊飞克; 王启明; 陈正豪; 谢苑林; 顾世杰
1990
Source Publication半导体学报
Volume11Issue:3Pages:202
metadata_83中科院半导体所;中科院物理所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:112390
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20415
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
朱龙德,熊飞克,王启明,等. GaAs/GaAlAs单量子阱电光吸收和光调制[J]. 半导体学报,1990,11(3):202.
APA 朱龙德,熊飞克,王启明,陈正豪,谢苑林,&顾世杰.(1990).GaAs/GaAlAs单量子阱电光吸收和光调制.半导体学报,11(3),202.
MLA 朱龙德,et al."GaAs/GaAlAs单量子阱电光吸收和光调制".半导体学报 11.3(1990):202.
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