SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si(100)-As表面纯化作用和氧吸附
钟战天; 王大文; 范越; 李承芳
1990
Source Publication半导体学报
Volume11Issue:2Pages:104
metadata_83中科院半导体所;清华大学
Subject Area半导体化学
Indexed ByCSCD
Language中文
CSCD IDCSCD:112399
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20407
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
钟战天,王大文,范越,等. Si(100)-As表面纯化作用和氧吸附[J]. 半导体学报,1990,11(2):104.
APA 钟战天,王大文,范越,&李承芳.(1990).Si(100)-As表面纯化作用和氧吸附.半导体学报,11(2),104.
MLA 钟战天,et al."Si(100)-As表面纯化作用和氧吸附".半导体学报 11.2(1990):104.
Files in This Item:
File Name/Size DocType Version Access License
6317.pdf(214KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[钟战天]'s Articles
[王大文]'s Articles
[范越]'s Articles
Baidu academic
Similar articles in Baidu academic
[钟战天]'s Articles
[王大文]'s Articles
[范越]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[钟战天]'s Articles
[王大文]'s Articles
[范越]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.