Knowledge Management System Of Institute of Semiconductors,CAS
GaInAs/AlGaAs应变量子阱结构的荧光特性 | |
王杏华; Laiho Reino | |
1990 | |
Source Publication | 半导体学报
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Volume | 11Issue:1Pages:7 |
metadata_83 | 中科院半导体所;芬兰图尔库大学 |
Subject Area | 半导体物理 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:112408 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20405 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 王杏华,Laiho Reino. GaInAs/AlGaAs应变量子阱结构的荧光特性[J]. 半导体学报,1990,11(1):7. |
APA | 王杏华,&Laiho Reino.(1990).GaInAs/AlGaAs应变量子阱结构的荧光特性.半导体学报,11(1),7. |
MLA | 王杏华,et al."GaInAs/AlGaAs应变量子阱结构的荧光特性".半导体学报 11.1(1990):7. |
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6316.pdf(182KB) | 限制开放 | -- | Application Full Text |
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