SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaInAs/AlGaAs应变量子阱结构的荧光特性
王杏华; Laiho Reino
1990
Source Publication半导体学报
Volume11Issue:1Pages:7
metadata_83中科院半导体所;芬兰图尔库大学
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:112408
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20405
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王杏华,Laiho Reino. GaInAs/AlGaAs应变量子阱结构的荧光特性[J]. 半导体学报,1990,11(1):7.
APA 王杏华,&Laiho Reino.(1990).GaInAs/AlGaAs应变量子阱结构的荧光特性.半导体学报,11(1),7.
MLA 王杏华,et al."GaInAs/AlGaAs应变量子阱结构的荧光特性".半导体学报 11.1(1990):7.
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