GaInAs/AlGaAs应变量子阱结构的荧光特性

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	GaInAs/AlGaAs应变量子阱结构的荧光特性
	王杏华; Laiho Reino
	1990
Source Publication	半导体学报
Volume	11 Issue:1 Pages:7
metadata_83	中科院半导体所;芬兰图尔库大学
Subject Area	半导体物理
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:112408
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20405
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	王杏华,Laiho Reino. GaInAs/AlGaAs应变量子阱结构的荧光特性[J]. 半导体学报,1990,11(1):7.
APA	王杏华,&Laiho Reino.(1990).GaInAs/AlGaAs应变量子阱结构的荧光特性.半导体学报,11(1),7.
MLA	王杏华,et al."GaInAs/AlGaAs应变量子阱结构的荧光特性".半导体学报 11.1(1990):7.

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