SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
用HREM研究MBE生长GaAs/Si异质结构的微孪晶
陈弘; 褚一鸣; 李方华; 杨大宇; 王风莲
1990
Source Publication电子显微学报
Volume9Issue:3Pages:195
metadata_83中科院物理所;中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:115983
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20385
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈弘,褚一鸣,李方华,等. 用HREM研究MBE生长GaAs/Si异质结构的微孪晶[J]. 电子显微学报,1990,9(3):195.
APA 陈弘,褚一鸣,李方华,杨大宇,&王风莲.(1990).用HREM研究MBE生长GaAs/Si异质结构的微孪晶.电子显微学报,9(3),195.
MLA 陈弘,et al."用HREM研究MBE生长GaAs/Si异质结构的微孪晶".电子显微学报 9.3(1990):195.
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