用HREM研究MBE生长GaAs/Si异质结构的微孪晶

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	用HREM研究MBE生长GaAs/Si异质结构的微孪晶
	陈弘; 褚一鸣; 李方华; 杨大宇; 王风莲
	1990
Source Publication	电子显微学报
Volume	9 Issue:3 Pages:195
metadata_83	中科院物理所;中科院半导体所
Subject Area	半导体物理
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:115983
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20385
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	陈弘,褚一鸣,李方华,等. 用HREM研究MBE生长GaAs/Si异质结构的微孪晶[J]. 电子显微学报,1990,9(3):195.
APA	陈弘,褚一鸣,李方华,杨大宇,&王风莲.(1990).用HREM研究MBE生长GaAs/Si异质结构的微孪晶.电子显微学报,9(3),195.
MLA	陈弘,et al."用HREM研究MBE生长GaAs/Si异质结构的微孪晶".电子显微学报 9.3(1990):195.

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