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用HREM研究MBE生长GaAs/Si异质结构的微孪晶 | |
陈弘; 褚一鸣; 李方华; 杨大宇; 王风莲 | |
1990 | |
Source Publication | 电子显微学报
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Volume | 9Issue:3Pages:195 |
metadata_83 | 中科院物理所;中科院半导体所 |
Subject Area | 半导体物理 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:115983 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20385 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 陈弘,褚一鸣,李方华,等. 用HREM研究MBE生长GaAs/Si异质结构的微孪晶[J]. 电子显微学报,1990,9(3):195. |
APA | 陈弘,褚一鸣,李方华,杨大宇,&王风莲.(1990).用HREM研究MBE生长GaAs/Si异质结构的微孪晶.电子显微学报,9(3),195. |
MLA | 陈弘,et al."用HREM研究MBE生长GaAs/Si异质结构的微孪晶".电子显微学报 9.3(1990):195. |
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