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含氮直拉硅中氧沉淀及伴生缺陷的特征 | |
吴晓初; 朱键; 施天生; 祁明维; 谭淞生; 褚一鸣 | |
1990 | |
Source Publication | 电子显微学报
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Volume | 9Issue:3Pages:192 |
metadata_83 | 中科院上海冶金所;中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:116004 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20383 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 吴晓初,朱键,施天生,等. 含氮直拉硅中氧沉淀及伴生缺陷的特征[J]. 电子显微学报,1990,9(3):192. |
APA | 吴晓初,朱键,施天生,祁明维,谭淞生,&褚一鸣.(1990).含氮直拉硅中氧沉淀及伴生缺陷的特征.电子显微学报,9(3),192. |
MLA | 吴晓初,et al."含氮直拉硅中氧沉淀及伴生缺陷的特征".电子显微学报 9.3(1990):192. |
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