SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
含氮直拉硅中氧沉淀及伴生缺陷的特征
吴晓初; 朱键; 施天生; 祁明维; 谭淞生; 褚一鸣
1990
Source Publication电子显微学报
Volume9Issue:3Pages:192
metadata_83中科院上海冶金所;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:116004
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20383
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴晓初,朱键,施天生,等. 含氮直拉硅中氧沉淀及伴生缺陷的特征[J]. 电子显微学报,1990,9(3):192.
APA 吴晓初,朱键,施天生,祁明维,谭淞生,&褚一鸣.(1990).含氮直拉硅中氧沉淀及伴生缺陷的特征.电子显微学报,9(3),192.
MLA 吴晓初,et al."含氮直拉硅中氧沉淀及伴生缺陷的特征".电子显微学报 9.3(1990):192.
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