含氮直拉硅中氧沉淀及伴生缺陷的特征

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	含氮直拉硅中氧沉淀及伴生缺陷的特征
	吴晓初; 朱键; 施天生; 祁明维; 谭淞生; 褚一鸣
	1990
Source Publication	电子显微学报
Volume	9 Issue:3 Pages:192
metadata_83	中科院上海冶金所;中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:116004
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20383
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	吴晓初,朱键,施天生,等. 含氮直拉硅中氧沉淀及伴生缺陷的特征[J]. 电子显微学报,1990,9(3):192.
APA	吴晓初,朱键,施天生,祁明维,谭淞生,&褚一鸣.(1990).含氮直拉硅中氧沉淀及伴生缺陷的特征.电子显微学报,9(3),192.
MLA	吴晓初,et al."含氮直拉硅中氧沉淀及伴生缺陷的特征".电子显微学报 9.3(1990):192.

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