SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MBE生长的GaAs1—xSbx/GaAs系中缺陷的研究
范缇文; 阎春辉; 郑海群; 孔梅影; 田连地; 周玉清
1990
Source Publication电子显微学报
Volume9Issue:3Pages:193
metadata_83中科院半导体所;中科院物理所
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20381
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范缇文,阎春辉,郑海群,等. MBE生长的GaAs1—xSbx/GaAs系中缺陷的研究[J]. 电子显微学报,1990,9(3):193.
APA 范缇文,阎春辉,郑海群,孔梅影,田连地,&周玉清.(1990).MBE生长的GaAs1—xSbx/GaAs系中缺陷的研究.电子显微学报,9(3),193.
MLA 范缇文,et al."MBE生长的GaAs1—xSbx/GaAs系中缺陷的研究".电子显微学报 9.3(1990):193.
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