SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
交叉电场和磁场下GaAs/AlGaAs超晶格子带结构
范卫军; 夏建白
1990
Source Publication物理学报
Volume39Issue:9Pages:1465
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:129119
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20361
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范卫军,夏建白. 交叉电场和磁场下GaAs/AlGaAs超晶格子带结构[J]. 物理学报,1990,39(9):1465.
APA 范卫军,&夏建白.(1990).交叉电场和磁场下GaAs/AlGaAs超晶格子带结构.物理学报,39(9),1465.
MLA 范卫军,et al."交叉电场和磁场下GaAs/AlGaAs超晶格子带结构".物理学报 39.9(1990):1465.
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