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静压下GaAs1—xPx:N(x≤0.88)中N等电子陷阱的束缚激子发光
糜东林; 郑健生; 颜炳章; 李国华; 汪兆平; 韩和相
1990
Source Publication厦门大学学报. 自然科学版
Volume29Issue:5Pages:510
metadata_83厦门大学;中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20359
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
糜东林,郑健生,颜炳章,等. 静压下GaAs1—xPx:N(x≤0.88)中N等电子陷阱的束缚激子发光[J]. 厦门大学学报. 自然科学版,1990,29(5):510.
APA 糜东林,郑健生,颜炳章,李国华,汪兆平,&韩和相.(1990).静压下GaAs1—xPx:N(x≤0.88)中N等电子陷阱的束缚激子发光.厦门大学学报. 自然科学版,29(5),510.
MLA 糜东林,et al."静压下GaAs1—xPx:N(x≤0.88)中N等电子陷阱的束缚激子发光".厦门大学学报. 自然科学版 29.5(1990):510.
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