SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Pd/c-Si界面反应研究
沈波; 方一生; 赵特秀; 许振嘉
1990
Source Publication中国科学技术大学学报
Volume20Issue:2Pages:143
metadata_83中国科学技术大学;中科院半导体所
Subject Area半导体材料
Funding Organization其它基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:133542
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20355
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
沈波,方一生,赵特秀,等. Pd/c-Si界面反应研究[J]. 中国科学技术大学学报,1990,20(2):143.
APA 沈波,方一生,赵特秀,&许振嘉.(1990).Pd/c-Si界面反应研究.中国科学技术大学学报,20(2),143.
MLA 沈波,et al."Pd/c-Si界面反应研究".中国科学技术大学学报 20.2(1990):143.
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