SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
LP-MOVPE Ga(1-x) InxAs/InP量子阱结构材料
段树坤; 熊飞克; 李学斌; 李晶; 王玉田; 江德生; 徐俊英; 万寿科; 钱家骏
1991
Source Publication半导体学报
Volume12Issue:9Pages:578
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20353
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
段树坤,熊飞克,李学斌,等. LP-MOVPE Ga(1-x) InxAs/InP量子阱结构材料[J]. 半导体学报,1991,12(9):578.
APA 段树坤.,熊飞克.,李学斌.,李晶.,王玉田.,...&钱家骏.(1991).LP-MOVPE Ga(1-x) InxAs/InP量子阱结构材料.半导体学报,12(9),578.
MLA 段树坤,et al."LP-MOVPE Ga(1-x) InxAs/InP量子阱结构材料".半导体学报 12.9(1991):578.
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