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MBE GaAs/GaP(001)异质外延层结构参数的X射线双晶衍射研究
王春艳; 王玉田; 孔梅影
1991
Source Publication半导体学报
Volume12Issue:8Pages:513
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:140073
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20351
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王春艳,王玉田,孔梅影. MBE GaAs/GaP(001)异质外延层结构参数的X射线双晶衍射研究[J]. 半导体学报,1991,12(8):513.
APA 王春艳,王玉田,&孔梅影.(1991).MBE GaAs/GaP(001)异质外延层结构参数的X射线双晶衍射研究.半导体学报,12(8),513.
MLA 王春艳,et al."MBE GaAs/GaP(001)异质外延层结构参数的X射线双晶衍射研究".半导体学报 12.8(1991):513.
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