SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
刻槽硅衬底上的GaAs/AlGaAs超晶格衬材料的微结构特性
范缇文; 梁基本
1991
Source Publication半导体学报
Volume12Issue:7Pages:412
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:140105
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20343
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范缇文,梁基本. 刻槽硅衬底上的GaAs/AlGaAs超晶格衬材料的微结构特性[J]. 半导体学报,1991,12(7):412.
APA 范缇文,&梁基本.(1991).刻槽硅衬底上的GaAs/AlGaAs超晶格衬材料的微结构特性.半导体学报,12(7),412.
MLA 范缇文,et al."刻槽硅衬底上的GaAs/AlGaAs超晶格衬材料的微结构特性".半导体学报 12.7(1991):412.
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