SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
电场下超晶格GaAs/Ga(1-x)AlxAs[111]的电子结构
范卫军; 夏建白
1991
Source Publication半导体学报
Volume12Issue:6Pages:323
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20335
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范卫军,夏建白. 电场下超晶格GaAs/Ga(1-x)AlxAs[111]的电子结构[J]. 半导体学报,1991,12(6):323.
APA 范卫军,&夏建白.(1991).电场下超晶格GaAs/Ga(1-x)AlxAs[111]的电子结构.半导体学报,12(6),323.
MLA 范卫军,et al."电场下超晶格GaAs/Ga(1-x)AlxAs[111]的电子结构".半导体学报 12.6(1991):323.
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