SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Cr/GaAs界面的反应特性及电子性质的研究
金高龙; 陈维德; 许振嘉
1991
Source Publication半导体学报
Volume12Issue:5Pages:265
metadata_83中科院半导体所;中国科学技术大学
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:140129
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20329
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
金高龙,陈维德,许振嘉. Cr/GaAs界面的反应特性及电子性质的研究[J]. 半导体学报,1991,12(5):265.
APA 金高龙,陈维德,&许振嘉.(1991).Cr/GaAs界面的反应特性及电子性质的研究.半导体学报,12(5),265.
MLA 金高龙,et al."Cr/GaAs界面的反应特性及电子性质的研究".半导体学报 12.5(1991):265.
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