SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaInAs/AlInAs多量子阱结构光学性质的研究
江德生; 李锋; 张永航; Ploog K
1991
Source Publication半导体学报
Volume12Issue:3Pages:136
metadata_83中科院半导体所;德国马普固体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:140133
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20327
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
江德生,李锋,张永航,等. GaInAs/AlInAs多量子阱结构光学性质的研究[J]. 半导体学报,1991,12(3):136.
APA 江德生,李锋,张永航,&Ploog K.(1991).GaInAs/AlInAs多量子阱结构光学性质的研究.半导体学报,12(3),136.
MLA 江德生,et al."GaInAs/AlInAs多量子阱结构光学性质的研究".半导体学报 12.3(1991):136.
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