SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
不同阱宽的InxGa(1-x)As/GaAs应变量子阱的压力行为
李国华; 郑宝真; 韩和相; 汪兆平
1991
Source Publication半导体学报
Volume12Issue:3Pages:177
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20325
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李国华,郑宝真,韩和相,等. 不同阱宽的InxGa(1-x)As/GaAs应变量子阱的压力行为[J]. 半导体学报,1991,12(3):177.
APA 李国华,郑宝真,韩和相,&汪兆平.(1991).不同阱宽的InxGa(1-x)As/GaAs应变量子阱的压力行为.半导体学报,12(3),177.
MLA 李国华,et al."不同阱宽的InxGa(1-x)As/GaAs应变量子阱的压力行为".半导体学报 12.3(1991):177.
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