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nμc-Si:H/SiOx/Ag隧道背面拉触对a-Si:H太阳能电池性能的影响
李海峰; 熊华; 刁宏伟; 郑怀德; 廖显伯
1991
Source Publication半导体学报
Volume12Issue:11Pages:705
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20315
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李海峰,熊华,刁宏伟,等. nμc-Si:H/SiOx/Ag隧道背面拉触对a-Si:H太阳能电池性能的影响[J]. 半导体学报,1991,12(11):705.
APA 李海峰,熊华,刁宏伟,郑怀德,&廖显伯.(1991).nμc-Si:H/SiOx/Ag隧道背面拉触对a-Si:H太阳能电池性能的影响.半导体学报,12(11),705.
MLA 李海峰,et al."nμc-Si:H/SiOx/Ag隧道背面拉触对a-Si:H太阳能电池性能的影响".半导体学报 12.11(1991):705.
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