SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
LPCVD氮化硅膜中的氢含量及其对pH-ISFET敏感特性的影响
陈克铭; 李国花; 吕惠云; 陈朗星
1991
Source Publication半导体学报
Volume12Issue:12Pages:721
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:140160
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20313
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈克铭,李国花,吕惠云,等. LPCVD氮化硅膜中的氢含量及其对pH-ISFET敏感特性的影响[J]. 半导体学报,1991,12(12):721.
APA 陈克铭,李国花,吕惠云,&陈朗星.(1991).LPCVD氮化硅膜中的氢含量及其对pH-ISFET敏感特性的影响.半导体学报,12(12),721.
MLA 陈克铭,et al."LPCVD氮化硅膜中的氢含量及其对pH-ISFET敏感特性的影响".半导体学报 12.12(1991):721.
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