SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MOVPE生长GaAs薄层的线偏振光吸收系数的电流感生变化
王德煌; 王威礼; 李桂棠; 段树坤
1991
Source Publication半导体学报
Volume12Issue:10Pages:641
metadata_83清华大学;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:140171
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20311
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王德煌,王威礼,李桂棠,等. MOVPE生长GaAs薄层的线偏振光吸收系数的电流感生变化[J]. 半导体学报,1991,12(10):641.
APA 王德煌,王威礼,李桂棠,&段树坤.(1991).MOVPE生长GaAs薄层的线偏振光吸收系数的电流感生变化.半导体学报,12(10),641.
MLA 王德煌,et al."MOVPE生长GaAs薄层的线偏振光吸收系数的电流感生变化".半导体学报 12.10(1991):641.
Files in This Item:
File Name/Size DocType Version Access License
6263.pdf(81KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[王德煌]'s Articles
[王威礼]'s Articles
[李桂棠]'s Articles
Baidu academic
Similar articles in Baidu academic
[王德煌]'s Articles
[王威礼]'s Articles
[李桂棠]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[王德煌]'s Articles
[王威礼]'s Articles
[李桂棠]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.