SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
用VMOSFET产生高频大幅度纳秒脉冲
尹成群; 李锦林
1991
Source Publication电子测量与仪器学报
Volume5Issue:3Pages:1
metadata_83华北电力大学(保定);中科院半导体所
Subject Area微电子学
Funding Organization其它基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:143517
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20303
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
尹成群,李锦林. 用VMOSFET产生高频大幅度纳秒脉冲[J]. 电子测量与仪器学报,1991,5(3):1.
APA 尹成群,&李锦林.(1991).用VMOSFET产生高频大幅度纳秒脉冲.电子测量与仪器学报,5(3),1.
MLA 尹成群,et al."用VMOSFET产生高频大幅度纳秒脉冲".电子测量与仪器学报 5.3(1991):1.
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