SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
一种新的非均匀减薄法-选择阳极氧化法
高凤升; 龚秀英; 葛永才
1991
Source Publication电子科学学刊
Volume13Issue:2Pages:221
metadata_83中科院半导体所
Subject Area半导体化学
Indexed ByCSCD
Language中文
CSCD IDCSCD:143713
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20299
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
高凤升,龚秀英,葛永才. 一种新的非均匀减薄法-选择阳极氧化法[J]. 电子科学学刊,1991,13(2):221.
APA 高凤升,龚秀英,&葛永才.(1991).一种新的非均匀减薄法-选择阳极氧化法.电子科学学刊,13(2),221.
MLA 高凤升,et al."一种新的非均匀减薄法-选择阳极氧化法".电子科学学刊 13.2(1991):221.
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