SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅的钴溅射引进深能级的研究
卢励吾; Groeseneken G; Maex K
1991
Source Publication电子学报
Volume19Issue:1Pages:113
metadata_83中科院半导体所;比利时IMEC
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:143991
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20293
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,Groeseneken G,Maex K. 硅的钴溅射引进深能级的研究[J]. 电子学报,1991,19(1):113.
APA 卢励吾,Groeseneken G,&Maex K.(1991).硅的钴溅射引进深能级的研究.电子学报,19(1),113.
MLA 卢励吾,et al."硅的钴溅射引进深能级的研究".电子学报 19.1(1991):113.
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