硅的钴溅射引进深能级的研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	硅的钴溅射引进深能级的研究
	卢励吾; Groeseneken G; Maex K
	1991
Source Publication	电子学报
Volume	19 Issue:1 Pages:113
metadata_83	中科院半导体所;比利时IMEC
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:143991
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20293
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	卢励吾,Groeseneken G,Maex K. 硅的钴溅射引进深能级的研究[J]. 电子学报,1991,19(1):113.
APA	卢励吾,Groeseneken G,&Maex K.(1991).硅的钴溅射引进深能级的研究.电子学报,19(1),113.
MLA	卢励吾,et al."硅的钴溅射引进深能级的研究".电子学报 19.1(1991):113.

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