SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
分子束外延生长GaAs/Si异质结电学特性的研究
周洁; 卢励吾; 韩志勇; 梁基本
1991
Source Publication物理学报
Volume40Issue:11Pages:1827
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:157586
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20273
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周洁,卢励吾,韩志勇,等. 分子束外延生长GaAs/Si异质结电学特性的研究[J]. 物理学报,1991,40(11):1827.
APA 周洁,卢励吾,韩志勇,&梁基本.(1991).分子束外延生长GaAs/Si异质结电学特性的研究.物理学报,40(11),1827.
MLA 周洁,et al."分子束外延生长GaAs/Si异质结电学特性的研究".物理学报 40.11(1991):1827.
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