Ga（1-x）InxSb/GaSb应变层超晶格的MOVPE生长

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Ga（1-x）InxSb/GaSb应变层超晶格的MOVPE生长
	陆大成; 汪度; 刘祥林; 万寿科; 王玉田
	1992
Source Publication	半导体学报
Volume	13 Issue:9 Pages:584
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20257
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	陆大成,汪度,刘祥林,等. Ga（1-x）InxSb/GaSb应变层超晶格的MOVPE生长[J]. 半导体学报,1992,13(9):584.
APA	陆大成,汪度,刘祥林,万寿科,&王玉田.(1992).Ga（1-x）InxSb/GaSb应变层超晶格的MOVPE生长.半导体学报,13(9),584.
MLA	陆大成,et al."Ga（1-x）InxSb/GaSb应变层超晶格的MOVPE生长".半导体学报 13.9(1992):584.

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