Knowledge Management System Of Institute of Semiconductors,CAS
Ga(1-x)InxSb/GaSb应变层超晶格的MOVPE生长 | |
陆大成; 汪度; 刘祥林; 万寿科; 王玉田 | |
1992 | |
Source Publication | 半导体学报
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Volume | 13Issue:9Pages:584 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20257 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 陆大成,汪度,刘祥林,等. Ga(1-x)InxSb/GaSb应变层超晶格的MOVPE生长[J]. 半导体学报,1992,13(9):584. |
APA | 陆大成,汪度,刘祥林,万寿科,&王玉田.(1992).Ga(1-x)InxSb/GaSb应变层超晶格的MOVPE生长.半导体学报,13(9),584. |
MLA | 陆大成,et al."Ga(1-x)InxSb/GaSb应变层超晶格的MOVPE生长".半导体学报 13.9(1992):584. |
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