SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
用质量分离的低能离子束外延法生长β-FeSi2半导体外延膜的初步研究
姚振钰; 任治璋; 王向明; 刘志凯; 黄大定; 秦复光; 林兰英
1992
Source Publication半导体学报
Volume13Issue:8Pages:518
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20253
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
姚振钰,任治璋,王向明,等. 用质量分离的低能离子束外延法生长β-FeSi2半导体外延膜的初步研究[J]. 半导体学报,1992,13(8):518.
APA 姚振钰.,任治璋.,王向明.,刘志凯.,黄大定.,...&林兰英.(1992).用质量分离的低能离子束外延法生长β-FeSi2半导体外延膜的初步研究.半导体学报,13(8),518.
MLA 姚振钰,et al."用质量分离的低能离子束外延法生长β-FeSi2半导体外延膜的初步研究".半导体学报 13.8(1992):518.
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