SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
CZNTD Si中氧碳对缺陷-杂质复合体行为的影响
张一心; 李朝勇; 李光平; 何秀坤; 卢存刚; 李祖华
1992
Source Publication半导体学报
Volume13Issue:7Pages:438
metadata_83中科院半导体所;机电部第46所;中国原子能科学院;北京605厂
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:168613
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20251
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张一心,李朝勇,李光平,等. CZNTD Si中氧碳对缺陷-杂质复合体行为的影响[J]. 半导体学报,1992,13(7):438.
APA 张一心,李朝勇,李光平,何秀坤,卢存刚,&李祖华.(1992).CZNTD Si中氧碳对缺陷-杂质复合体行为的影响.半导体学报,13(7),438.
MLA 张一心,et al."CZNTD Si中氧碳对缺陷-杂质复合体行为的影响".半导体学报 13.7(1992):438.
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