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弹性应变及结构参数对InAs/GaAs应变层超晶格能带结构的影响
毕文刚; 李爱珍
1992
Source Publication半导体学报
Volume13Issue:6Pages:359
metadata_83中科院上海冶金所;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:168625
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20247
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
毕文刚,李爱珍. 弹性应变及结构参数对InAs/GaAs应变层超晶格能带结构的影响[J]. 半导体学报,1992,13(6):359.
APA 毕文刚,&李爱珍.(1992).弹性应变及结构参数对InAs/GaAs应变层超晶格能带结构的影响.半导体学报,13(6),359.
MLA 毕文刚,et al."弹性应变及结构参数对InAs/GaAs应变层超晶格能带结构的影响".半导体学报 13.6(1992):359.
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