SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs超晶格的Wannier Stark效应
张耀辉; 汪德生; 李峰; 周均铭; 梅笑冰
1992
Source Publication半导体学报
Volume13Issue:5Pages:316
metadata_83中科院半导体所;中科院物理所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:168643
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20237
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张耀辉,汪德生,李峰,等. GaAs/GaAlAs超晶格的Wannier Stark效应[J]. 半导体学报,1992,13(5):316.
APA 张耀辉,汪德生,李峰,周均铭,&梅笑冰.(1992).GaAs/GaAlAs超晶格的Wannier Stark效应.半导体学报,13(5),316.
MLA 张耀辉,et al."GaAs/GaAlAs超晶格的Wannier Stark效应".半导体学报 13.5(1992):316.
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